Oral presentation

[8a-Z07-1~8] 6.3 Oxide electronics

Tue. Sep 8, 2020 9:15 AM - 11:30 AM Z07

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:15 AM - 9:30 AM

[8a-Z07-1] Crystal quality improvement of SrRuO₃ thin films by machine-learning-assisted molecular beam epitaxy

〇Yuuki Wakabayashi¹, Takuma Otsuka², Yoshiharu Krockenberger¹, Hiroshi Sawada², Yoshitaka Taniyasu¹, Hideki Yamamoto¹ (1.NTT BRL, 2.NTT CS lab.)

9:30 AM - 9:45 AM

△ [8a-Z07-2] Quantum transport evidence of Weyl fermions in a high-quality ferromagnetic perovskite oxide SrRuO₃ thin film

〇Kosuke Takiguchi^1,2, Yuki K. Wakabayashi¹, Hiroshi Irie¹, Yoshiharu Krockenberger¹, Takuma Otsuka³, Hiroshi Sawada³, Sergey A. Nikolaev⁴, Hena Das⁴, Masaaki Tanaka^2,5, Taniyasu Yoshitaka¹, Hideki Yamamoto¹ (1.NTT-BRL, 2.UTokyo, Eng., 3.NTT-CSL, 4.Tokyo Tech. WRHI, 5.UTokyo, CSRN)

9:45 AM - 10:00 AM

△ [8a-Z07-3] Ferromagnetism and magnetotransport properties of Pb doped SrRuO₃ thin films

〇(M1)Lingfei Zhang¹, Takahiro Fujita¹, Masashi Kawasaki^1,2 (1.The Univ. of Tokyo, 2.RIKEN CEMS)

10:00 AM - 10:15 AM

△ [8a-Z07-4] Low temperature properties of Kondo lattice PrO epitaxial thin films

〇Hirokazu Shimizu¹, Nobuto Abe¹, Taku Yamamoto¹, Daichi Saito¹, Kenichi Kaminaga^2,3, Daichi Oka¹, Noriaki Kimura¹, Tomoteru Fukumura^1,3,4,5 (1.Tohoku Univ., 2.Tohoku Univ. Sch. Eng., 3.Tohoku Univ. AIMR & CRC, 4.Tohoku Univ. CSIS, 5.Tohoku Univ. CSRN)

10:30 AM - 10:45 AM

△ [8a-Z07-5] Modulation of lattice and magnetism by nanocrystallization of Ca₂RuO₄

〇(M2)Keita Tanahashi¹, Hiroyoshi Nobukane¹, Masahito Sakoda¹, Satoshi Tanda¹, Takahiro Nomura¹ (1.Hokkaido Univ.)

10:45 AM - 11:00 AM

△ [8a-Z07-6] Stable Resistive Switching Behaviors in Epitaxial Thin Films of Ca₂RuO₄ Based on the Current-Induced Metal-Insulator Transition

〇Keiji Tsubaki¹, Tenki Ishida¹, Atsushi Tsurumaki-Fukuchi¹, Takayoshi Katase², Toshio Kamiya², Masashi Arita¹, Yasuo Takahashi¹ (1.IST, Hokkaido Univ., 2.MSL, Tokyo Tech.)

11:00 AM - 11:15 AM

△ [8a-Z07-7] Temperature dependence of forward bias I-V curves of (La_1-xSr_x)VO₃/p-Si(100) junctions

〇Keisuke Muranushi¹, Hiroshi Sakanaga¹, Hiroki Wadati², Koji Arafune¹, Haruhiko Yoshida¹, Yasushi Hotta¹ (1.Univ. of Hyogo(E), 2.Univ. of Hyogo(MS))

11:15 AM - 11:30 AM

△ [8a-Z07-8] Thickness Dependence of Electronic and Crystal Structures in VO₂ Ultrathin Films

〇Daisuke Shiga^1,2, Billy Yang¹, Naoto Hasegawa¹, Tatsuhiko Kanda¹, Ryosuke Tokunaga¹, Kohei Yoshimatsu¹, Ryu Yukawa², Miho Kitamura², Koji Horiba², Hiroshi Kumigashira^1,2 (1.IMRAM, Tohoku Univ., 2.IMSS, KEK)

Oral presentation

[9a-Z07-1~9] 6.3 Oxide electronics

Wed. Sep 9, 2020 9:00 AM - 11:30 AM Z07

Yasushi Hirose(Univ. of Tokyo)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[9a-Z07-1] Metal-insulator transition of SrVO₃by electrochemical etching

〇Hikaru Okuma¹, Yumiko Katayama¹, Kazunori Ueno¹ (1.Univ. Tokyo)

9:15 AM - 9:30 AM

[9a-Z07-2] Screening of SrTi_1-xV_xO₃ thin films for a transparent electrode material
by using in-situ photoemission spectroscopy

〇Tatsuhiko Kanda¹, Daisuke Shiga^1,2, Ryu Yukawa², Naoto Hasegawa¹, Ryosuke Tokunaga¹, Xianglin Cheng¹, Miho Kitamura², Koji Horiba², Kohei Yoshimatsu¹, Hiroshi Kumigashira^1,2 (1.Tohoku Univ, 2.KEK-IMSS)

9:30 AM - 9:45 AM

[9a-Z07-3] Nonlinear charge-spin conversion in SrIrO₃ thin films

〇Yusuke Kozuka¹, Shinji Isogami¹, Das Saikat¹, Jun Fujioka², Shinya Kasai^1,3 (1.NIMS, 2.Univ. Tsukuba, 3.JST-PRESTO)

9:45 AM - 10:00 AM

[9a-Z07-4] Evaluation of the dependent of memory effect in SmNiO₃ proton registers on history of voltage application

〇Shin Nonaka¹, Azusa Hattori¹, Hidekazu Tanaka¹ (1.ISIR, Osaka Univ)

10:00 AM - 10:15 AM

[9a-Z07-5] The size dependence of the resistivity modulation by proton doping in NdNiO₃ nanowire

〇Akira Namba¹, Azusa Hattori¹, Hidekazu Tanaka¹ (1.ISIR, Osaka Univ.)

10:30 AM - 10:45 AM

[9a-Z07-6] Suppression of chemical reaction under ionic liquid gating of VO2 with a hBN insertion layer

〇Jun Takigawa¹, Mahito Yamamoto², Takashi Taniguchi³, Kenji Watanabe³, Teruo Kanki¹, Hidekazu Tanaka¹ (1.ISIR, Osaka Univ., 2.Kansai Univ., 3.NIMS)

10:45 AM - 11:00 AM

[9a-Z07-7] Composition control and change in the defect structure of YbFe₂O₄ epitaxial thin films

〇Kento Shimamoto¹, Kohei Miura¹, Daisuke Kiriya¹, Takeshi Yoshimura¹, Atushi Ashida¹, Norifumi Fujimura¹ (1.Osaka Prefecture Univ.)

11:00 AM - 11:15 AM

[9a-Z07-8] Correlation of PL properties and spin order in d-d transition of strongly correlated ferroelectrics YMnO₃thin film

〇Kohei Miura¹, Kento Shimamoto¹, Daisuke Kiriya¹, Takeshi Yoshimura¹, Atushi Ashida¹, Norifumi Fujimura¹ (1.Osaka Pref. Univ.)

11:15 AM - 11:30 AM

[9a-Z07-9] Microwave-assisted hydrothermal synthesis and characteristics of ZnGa₂O₄

〇Satoshi Ishii¹, Satoru Suzuki¹, Yukihisa Moriya¹, Takayuki Nakane², Hiroshi Ajiki¹, Takashi Naka² (1.Tokyo Denki Univ., 2.NIMS)

Oral presentation

[11a-Z07-1~9] 6.3 Oxide electronics

Fri. Sep 11, 2020 9:00 AM - 11:30 AM Z07

Shoso Shingubara(Kansai Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

▲ [11a-Z07-1] Selective growth and micro patterning of Au/Pb(Zr_0.52Ti_0.48)O₃/SrRuO₃ film capacitor structure by water lift off process

〇(D)Iwan Dwi Antoro¹, Takeshi Kawae¹ (1.College of Sci. & Tech. Kanazawa Univ.)

9:15 AM - 9:30 AM

[11a-Z07-2] Preparation of perovskite-type calcium tantalate thin films by Dynamic Aurora PLD

〇Takahiko Kawaguchi¹, Mayuko Sugita¹, Futa Aoshima¹, Naonori Sakamoto¹, Hisao Suzuki¹, Naoki Wakiya¹ (1.Shizuoka Univ.)

9:30 AM - 9:45 AM

[11a-Z07-3] Control of self-orientation for LaNiO₃ thin films deposited by CSD method

Yuga Tsuda¹, Rintaro Ashihara¹, Masami Kawahara², 〇Takeshi Kawae¹ (1.College of Sci. & Eng. Kanazawa Univ., 2.Kojundo Chemical Lab. Co.,ltd.)

9:45 AM - 10:00 AM

[11a-Z07-4] NiCo₂O₄films fabricated by reactive MBE and annealing in various oxygen pressures

Asaka Tsujie¹, Yoshinori Hara¹, Takashi Yanase², Toshihiro Shimada², 〇Taro Nagahama² (1.Hokkaido Univ. CSE, 2.Hokkaido Univ.)

10:00 AM - 10:15 AM

[11a-Z07-5] Physical property change of nickel oxide film by element addition

〇Hiroshi Morita¹, Masaya Hirano¹, Kaito Beppu¹ (1.S. O. C. Univ.)

10:30 AM - 10:45 AM

[11a-Z07-6] Effect of applied pulse polarity on analog behavior of HfO₂ charge trap memory

〇(M1)Hisato Onishi¹, Yasuo Nara¹ (1.Univ. of Hyogo)

10:45 AM - 11:00 AM

[11a-Z07-7] Fabrication and evaluation of all-solid-state amorphous thin-film Lithium-ion battery

〇Kotaro Yoneda¹, Masayasu Yoshida¹, Isaku Kanno¹ (1.Kobe Univ.)

11:00 AM - 11:15 AM

[11a-Z07-8] BiVO₄ thin film formation and visible light response evaluation of photocatalys

〇Tomoki Konishi^1,2, Takahiko Ban^1,2, Shinichi Yamamoto^1,2 (1.Ryukoku Univ., 2.Yamamoto Inst.)

11:15 AM - 11:30 AM

▲ [11a-Z07-9] Fabrication of Bismuth Vanadate photocatalyst films from single target by RF-sputtering method

〇(D)Liu Jiaqi¹, Kazuya Tajima¹, Muhammed Monirul Islam¹, Shigeru Ikeda², Takeaki Sakurai¹ (1.Univ. Tsukuba, 2.Konan Univ.)

Oral presentation

[11p-Z07-1~14] 6.3 Oxide electronics

Fri. Sep 11, 2020 1:00 PM - 4:45 PM Z07

Hisashi Shima(AIST), Seiichi KATO(物質・材料研究機構)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:00 PM - 1:15 PM

△ [11p-Z07-1] Designing a filament in ReRAM based on thermal flow control

〇(M2)Yuta Sasaki¹, Kentaro Kinoshita¹ (1.Tokyo Univ. of Sci)

1:15 PM - 1:30 PM

△ [11p-Z07-2] Correlation between depth profile of chemical compositions in tantalum oxide and analog controllability of resistive switching

〇Toshiki Miyatani¹, Nishi Yusuke¹, Kimoto Tsunenobu¹ (1.Kyoto Univ.)

1:30 PM - 1:45 PM

△ [11p-Z07-3] Effects of oxygen annealing on resistive switching characteristics in Ti/Pr_0.7Ca_0.3MnO₃/Pt ReRAM cells

〇Makoto Imuro¹, Naoki Kanegami¹, Tsunenobu Kimoto¹, Yusuke Nishi^1,2 (1.Kyoto Univ., 2.NIT Maizuru College)

1:45 PM - 2:00 PM

△ [11p-Z07-4] Resistance switching characteristics and photoelectron studies on hydrogen plasma-treated Pt/Nb:SrTiO₃ Schottky junctions

〇(M1)Taisei Murakami^1,2, Takeo Ohsawa², Takeshi Ogaki², Takamasa Ishigaki¹, Naoki Ogaki² (1.hosei Univ., 2.NIMS)

2:00 PM - 2:15 PM

△ [11p-Z07-5] Microstructure Changes in Digital and Analog Switching CBRAMs Observed by in situ TEM

〇Satoshi Muto¹, Tsutomu Nakajima¹, Atsushi Tsurumaki-Fukuchi¹, Masasi Arita¹, Yasuo Takahashi¹ (1.Hokkaido Univ.)

2:15 PM - 2:30 PM

[11p-Z07-6] Improvement of Data Retention Characteristics by Controlling Electrode Potential

〇hiroshi sato^1,2, kentaro kinoshita¹, yusei honma², hisashi shima², yasuhisa naitoh², hiroyuki akinaga², toshiyuki itoh³ (1.Tokyo Univ. of Sci., 2.AIST, 3.Tottori Univ.)

2:30 PM - 2:45 PM

[11p-Z07-7] Effect of HfO₂ film on resistance change behavior under voltage pulses at RESET process of Ti/HfO₂/Au-ReRAM device

〇Masahiro Morimoto¹, Rintaro Hatanaka¹, Takuya Yorioka¹, Tomohiro Shimizu¹, Takeshi Ito¹, Shoso Shingubara¹ (1.Kansai Univ.)

3:00 PM - 3:15 PM

[11p-Z07-8] Ambient thermal energy-driven synaptic transistor without electric power

〇Teruo Kanki¹, Keita Muraoka¹ (1.Osaka Univ.)

3:15 PM - 3:30 PM

[11p-Z07-9] Demonstration of Resistance Switching Devices Using Ga-In-Sn-Ta Liquid Metal Alloy Metal Oxide

〇Naoki Maeda¹, Takahiko Ban¹, Shinichi Yamamoto¹ (1.Ryukoku Univ.)

3:30 PM - 3:45 PM

[11p-Z07-10] Study of threshold switching device with controlling sputtered NbOx film composition

〇Rintaro Hatanaka¹, Masahiro Morimoto¹, Sota Nakamura¹, Tomohiro Shimizu¹, Takeshi Ito¹, Shoso Shingubara¹ (1.Kansai Univ.)

3:45 PM - 4:00 PM

[11p-Z07-11] Thermally Stimulated Current in Sputtered Ir / Ta₂O₅ (II)

〇Guento Misawa¹, Hisashi Shima¹, Yasuhisa Naitoh¹, Hiroyuki Akinaga¹ (1.DTech-AIST)

4:00 PM - 4:15 PM

[11p-Z07-12] Direct Observation of Electronic Structure of Amorphous Alumina ReRAM by Synchrotron Radiation

〇Seiichi Kato¹, Seisuke Nigo¹, Masato Kubota², Kenta Amemiya³ (1.NIMS, 2.JAEA, 3.KEK IMSS)

4:15 PM - 4:30 PM

[11p-Z07-13] Electronic structure of oxygen-excess amorphous Al₂O₃: First-principles calculations

〇Hiroyoshi Momida¹, Koichi Ashizawa², Naotaka Ohtsuka², Katsuhiro Sasaki², Tamio Oguchi¹ (1.Osaka Univ., 2.UACJ)

4:30 PM - 4:45 PM

[11p-Z07-14] Preparation and properties of doping-free p-type aluminum oxide semiconductor

〇Koichi Ashizawa¹, Naotaka Ohtsuka¹, Katsuhiro Sasaki¹, Seiichi Kato², Seisuke Nigo² (1.UACJ Corporation, 2.NIMS)

Sessions

6 Thin Films and Surfaces » 6.3 Oxide electronics

[8a-Z07-1~8] 6.3 Oxide electronics

△ [8a-Z07-2] Quantum transport evidence of Weyl fermions in a high-quality ferromagnetic perovskite oxide SrRuO3 thin film

△ [8a-Z07-3] Ferromagnetism and magnetotransport properties of Pb doped SrRuO3 thin films

△ [8a-Z07-4] Low temperature properties of Kondo lattice PrO epitaxial thin films

△ [8a-Z07-5] Modulation of lattice and magnetism by nanocrystallization of Ca2RuO4

△ [8a-Z07-6] Stable Resistive Switching Behaviors in Epitaxial Thin Films of Ca2RuO4 Based on the Current-Induced Metal-Insulator Transition

△ [8a-Z07-7] Temperature dependence of forward bias I-V curves of (La1-xSrx)VO3/p-Si(100) junctions

△ [8a-Z07-8] Thickness Dependence of Electronic and Crystal Structures in VO2 Ultrathin Films

[9a-Z07-1~9] 6.3 Oxide electronics

[11a-Z07-1~9] 6.3 Oxide electronics

▲ [11a-Z07-1] Selective growth and micro patterning of Au/Pb(Zr0.52Ti0.48)O3/SrRuO3 film capacitor structure by water lift off process

▲ [11a-Z07-9] Fabrication of Bismuth Vanadate photocatalyst films from single target by RF-sputtering method

[11p-Z07-1~14] 6.3 Oxide electronics

△ [11p-Z07-1] Designing a filament in ReRAM based on thermal flow control

△ [11p-Z07-2] Correlation between depth profile of chemical compositions in tantalum oxide and analog controllability of resistive switching

△ [11p-Z07-3] Effects of oxygen annealing on resistive switching characteristics in Ti/Pr0.7Ca0.3MnO3/Pt ReRAM cells

△ [11p-Z07-4] Resistance switching characteristics and photoelectron studies on hydrogen plasma-treated Pt/Nb:SrTiO3 Schottky junctions

△ [11p-Z07-5] Microstructure Changes in Digital and Analog Switching CBRAMs Observed by in situ TEM

Authenticate

△ [8a-Z07-2] Quantum transport evidence of Weyl fermions in a high-quality ferromagnetic perovskite oxide SrRuO₃ thin film

△ [8a-Z07-3] Ferromagnetism and magnetotransport properties of Pb doped SrRuO₃ thin films

△ [8a-Z07-5] Modulation of lattice and magnetism by nanocrystallization of Ca₂RuO₄

△ [8a-Z07-6] Stable Resistive Switching Behaviors in Epitaxial Thin Films of Ca₂RuO₄ Based on the Current-Induced Metal-Insulator Transition

△ [8a-Z07-7] Temperature dependence of forward bias I-V curves of (La_1-xSr_x)VO₃/p-Si(100) junctions

△ [8a-Z07-8] Thickness Dependence of Electronic and Crystal Structures in VO₂ Ultrathin Films

▲ [11a-Z07-1] Selective growth and micro patterning of Au/Pb(Zr_0.52Ti_0.48)O₃/SrRuO₃ film capacitor structure by water lift off process

△ [11p-Z07-3] Effects of oxygen annealing on resistive switching characteristics in Ti/Pr_0.7Ca_0.3MnO₃/Pt ReRAM cells

△ [11p-Z07-4] Resistance switching characteristics and photoelectron studies on hydrogen plasma-treated Pt/Nb:SrTiO₃ Schottky junctions