[9a-Z07-1~9] 6.3 Oxide electronics

[9a-Z07-6] Suppression of chemical reaction under ionic liquid gating of VO2 with a hBN insertion layer

〇Jun Takigawa¹, Mahito Yamamoto², Takashi Taniguchi³, Kenji Watanabe³, Teruo Kanki¹, Hidekazu Tanaka¹ (1.ISIR, Osaka Univ., 2.Kansai Univ., 3.NIMS)

Keywords:ionic liquid gating, hexagonal boron nitride, vanadium dioxide

Electrolyte gating has been reported to cause the modulation of physical properties due to chemical reactions. This chemical reaction is caused by the outflow of oxygen from the material to the ionic liquid. In this study, EDLT devices with hexagonal boron nitride (hBN) insert layer which shows excellent chemical stability and impermeability to ions have been fabricated and its chemical reaction suppression effect have been evaluated in terms of Raman spectra and electrical properties.