[11p-Z07-1~14] 6.3 Oxide electronics

△ [11p-Z07-3] Effects of oxygen annealing on resistive switching characteristics in Ti/Pr_0.7Ca_0.3MnO₃/Pt ReRAM cells

〇Makoto Imuro¹, Naoki Kanegami¹, Tsunenobu Kimoto¹, Yusuke Nishi^1,2 (1.Kyoto Univ., 2.NIT Maizuru College)

Keywords:resistive switching memory, interface, annealing