[11p-Z07-1~14] 6.3 Oxide electronics

△ [11p-Z07-4] Resistance switching characteristics and photoelectron studies on hydrogen plasma-treated Pt/Nb:SrTiO₃ Schottky junctions

〇(M1)Taisei Murakami^1,2, Takeo Ohsawa², Takeshi Ogaki², Takamasa Ishigaki¹, Naoki Ogaki² (1.hosei Univ., 2.NIMS)

Keywords:Resistans random accsess memory, Resistive switching behaviors

Resistive switching (RS) behaviors have been primarily exhibited in two-terminal structures using metal electrodes and transition-metal oxides. An external bias sweep to the devices enables the resistance switching from high resistance state and low resistance state. In this study, we find that the RS behaviors were different for Pt/Nb:SrTiO₃(001) junctions fabricated by magnetron sputtering under high or low vacuum environment. Furthermore, we investigate an impact of hydrogen plasma treatment as an extrinsic role for the RS behaviors and reveal that electronic states in the vicinity of the interfaces play a critical role in the resistive switching.