The 81st JSAP Autumn Meeting, 2020

Presentation information

Oral presentation

6 Thin Films and Surfaces » 6.3 Oxide electronics

[11p-Z07-1~14] 6.3 Oxide electronics

Fri. Sep 11, 2020 1:00 PM - 4:45 PM Z07

Hisashi Shima(AIST), Seiichi KATO(物質・材料研究機構)

3:45 PM - 4:00 PM

[11p-Z07-11] Thermally Stimulated Current in Sputtered Ir / Ta2O5 (II)

Guento Misawa1, Hisashi Shima1, Yasuhisa Naitoh1, Hiroyuki Akinaga1 (1.DTech-AIST)

Keywords:tantalum oxide, thermally stimulated current, trap level

Ta2O5, which has been familiar as a dielectric for capacitor, provides variety of resistive switch devices emerging on the market. Quantitative evaluation of the trap levels is important. It derives essential information for understanding and modeling of the device mechanisms. Thermal stimulus current (TSC) of the sputtered Ta2O5 film excited by light was measured at each heating rate to plot the peak temperatures and the trap depth was calculated. This time, we will report the detailed analysis results.