[11p-Z07-1~14] 6.3 Oxide electronics

[11p-Z07-14] Preparation and properties of doping-free p-type aluminum oxide semiconductor

〇Koichi Ashizawa¹, Naotaka Ohtsuka¹, Katsuhiro Sasaki¹, Seiichi Kato², Seisuke Nigo² (1.UACJ Corporation, 2.NIMS)

Keywords:doping-free p-type semiconductor, aluminum oxide semiconductor, melting electrolysis

A p-type aluminum oxide semiconductor with oxygen riched structure was fabricated. P-type characteristics and hysteresis characteristics were obtained by I-V measurement, and it was found that the produced thin films were doping-free p-type semiconductor.