[11a-Z09-1~12] 13.5 デバイス／配線／集積化技術

▲ [11a-Z09-2] Improvement of electrical characteristics of junctionless transistor with BF₂⁺ implanted poly-Si channel by boron segregation and fluorine passivation

〇(D)Minju Ahn¹、Takuya Saraya¹、Masaharu Kobayashi¹、Toshiro Hiramoto¹ (1.Institute of Industrial Science, The University of Tokyo)

キーワード：Juntionless transistor, Polycrystalline silicon, Fluorine

In this work, we experimentally investigated the dependence of dopant types (P⁺, B⁺, BF₂⁺) on the poly-Si JL transistors. We found that BF₂⁺ implanted poly-Si JL transistors have superior electrical characteristics such as steep SS and high carrier mobility to others, and it is expected that the passivation effect of F is remarkably effective even in the JL poly-Si transistors.