The 81st JSAP Autumn Meeting, 2020

Presentation information

Oral presentation

13 Semiconductors » 13.3 Insulator technology

[11a-Z10-1~10] 13.3 Insulator technology

Fri. Sep 11, 2020 8:30 AM - 11:15 AM Z10

Yuuichiro Mitani(Tokyo City University)

9:30 AM - 9:45 AM

[11a-Z10-5] Study on Deposition Mechanism of SiOx Films Produced by Silicone Oil and Ozone Gas

〇(M2)Weiqi Zhou1, Susumu Horita1 (1.JAIST)

Keywords:silicon oxide, CVD, FT-IR

Low-temperature SiOx films have been fabricated using APCVD method. In order to reduce the OH bonds content, we have studied the deposition mechanism. FT-IR method has been used to characterize the films.