[11a-Z10-1~10] 13.3 絶縁膜技術

▼ [11a-Z10-8] Low Temperature Neutral Beam Enhanced Atomic Layer Deposition of Silicon Dioxide and Silicon Nitride

〇(M1)GE BEIBEI¹、Chen Hua-Hsuan³、Daisuke Ohori^1,2,3、Takuya Ozaki¹、Seiji Samukawa^1,2 (1.IFS, Tohoku Univ.、2.AIMR, Tohoku Univ.、3.NCTU)

キーワード：neutral beam, atomic layer deposition, thin film

Neutral beam enhanced atomic layer deposition (NBEALD) is a novel deposition technique for depositing low temperature at 30°C, overcoming the inherent problems in plasma process and precise film thickness control. In this work, this technique was used to form the high-quality silicon dioxide (SiO₂) films and silicon nitride (Si_xN_y) films which are widely used in semiconductor protection and passivation. The silicon dioxide (SiO₂) films and silicon nitride (Si_xN_y) films were grown at 30°C, using bis(diethylamino)silane (BDEAS) as Si precursor, O₂ or N₂ as the neutral beam gases to deposit films on Si substrate. We used spectrum ellipsometer to measure film thickness, and the film quality were investigated by X-ray photoelectron spectroscopy (XPS) to analyze the chemical composition of the film. It is concluded from this result that NBEALD is a promising candidate for high-quality and low-temperature ALD.