[11a-Z18-1~10] 3.11 Photonic structures and phenomena

[11a-Z18-2] Effect of electrostatic irradiation on Raman silicon nanocavity laser (Ⅲ)

〇Yuki Takahashi¹, Satoshi Yasuda¹, Takashi Asano², Susumu Noda², Yasushi Takahashi¹ (1.Osaka Pref. Univ., 2.Kyoto Univ.)

Keywords:silicon raman laser, static electricity

We have developed a silicon Raman laser based on a high-Q-value photonic crystal nanocavity. The device achieves laser oscillation by combining two high-Q-value nano-resonant modes. Therefore, when the cavity loss increases due to environmental changes in the vicinity of the resonator, the laser oscillation stops. Previously, we reported that Raman laser oscillation was stopped by irradiating it with negative static electricity. In this report, it is investigated that the response of the Raman laser irradiated with positive static electricity .