[11a-Z23-1~9] 15.6 Group IV Compound Semiconductors (SiC)

[11a-Z23-6] Discussion on Reported Misorientation-Dependent Al Concentrations in 4H-SiC Layers Grown on (0001) and (000-1) Substrates by Chemical Vapor Deposition

〇Kazuhiro Mochizuki¹, Tomoyoshi Mishima¹ (1.Hosei Univ.)

Keywords:silicon carbide, aluminum, surface diffusion