[11a-Z23-1~9] 15.6 Group IV Compound Semiconductors (SiC)

[11a-Z23-7] Analysis of ease of incorporating carbon vacancies near the surface of 4H-SiC(0001)

〇Hibiki Nakashima¹, Yoshiaki Daigo², Ichiro Mizushima^2,3, Takashi Yoda^2,3, Kenta Chokawa¹, Kenji Shiraishi¹ (1.Nagoya Univ., 2.NuFlare Technology, Inc., 3.FIRST, Tokyo Institute of Technology)

Keywords:SiC, carbon vacancy