[11a-Z26-1~13] 9.2 Nanoparticles, Nanowires and Nanosheets

[11a-Z26-11] Size control of InP/InAsP heterostructure nanowires by thermal annealing and its application to light-emitting diode

Tomoya Akamatsu¹, Masahiro Sasaki¹, Katsuhiro Tomioka¹, 〇Junichi Motohisa¹ (1.Hokkaido University)

Keywords:semiconductor nanowire, light-emitting diode, nanowire quantum dot

Nanowire light-emitting diodes were fabricated using InP/InAsP heterostructure nanowires with controlled cross-sectional size by thermal annealing, and its emission properties were investigated. Electroluminescence (EL) from the InAsP layer in the pn-junction was confirmed in the near-infrared region. The integrated intensity of EL was proportional to the injection current, indicating that carriers were efficiently injected into the InAsP layer.