[11a-Z26-1~13] 9.2 ナノ粒子・ナノワイヤ・ナノシート

▲ [11a-Z26-8] Fabrication of Ge Nanotubes Using Zinc Oxide Nanowires as Templates

〇Yonglie Sun^1,2、Xiangdong Zheng^1,2、Wipakorn Jevasuwan¹、Naoki Fukata^1,2 (1.NIMS、2.Univ. of Tsukuba)

キーワード：germanium, Zinc Oxide

As the size of the semiconductor materials reduces to the nanoscale, the electrical and optical properties can be improved due to its high surface ratio, high integration density, and light trapping effect. There are many kinds of semiconductor nanomaterials, such as nanoparticles (NPs), nanowires (NWs), etc. Recently, nanotubes (NTs) have been attracting much attention for its much higher surface ratio. In my previous work, silicon (Si) NTs have been fabricated successfully. Since germanium (Ge) has much higher electron and hole mobilities and smaller band-gap than Si, it can be applied to the anode material in lithium-ion batteries, next-generation NT transistors, light emitted diodes and so on.
In this study, we focus on fabricating GeNTs and controlling the growth parameters by wet-etching of ZnO/Ge core-shell NWs.