[11p-Z04-1~14] 13.7 化合物及びパワー電子デバイス・プロセス技術

▼ [11p-Z04-3] Reduction of Leakage Current Through Interface Between Ga₂O₃ Epitaxial Layer and Substrate by Mg/ Fe Implantation

〇Sandeep Kumar¹、Takafumi Kamimura¹、Chia-Hung Lin¹、Yoshiaki Nakata¹、Masataka Higashiwaki¹ (1.NICT)

キーワード：Ga2O3, Mg/Fe Implantation, Leakage Current

Ga₂O₃ field effect transistors have shown tremendous potential for their possible applications in the field of power and RF electronics . Recently, a technical problem with Ga₂O₃ epitaxial structures that unwanted Si impurit ies accumulate at an interface between the epitaxial layer and the substrate is often discussed . This phenomenon results in formation of undesirable leakage current path in a buffer layer of the Ga₂O₃ FET , leading to poor turn off and breakdown characteristics In this work , we attempted to address the interface leakage issue by means of Mg or Fe ion implantation doping in to Ga₂O₃ native substrates for compensation of t he unintentionally doped (UID) Si donors prior to the subsequent epitaxial growth and succeeded in significantly reducing the interface leakage current by the Fe implantation.