[11p-Z04-1~14] 13.7 Compound and power electron devices and process technology

[11p-Z04-7] Delay time analysis of submicron Ga₂O₃ MOSFETs

〇Takafumi Kamimura¹, Yoshiaki Nakata¹, Masataka Higashiwaki¹ (1.NICT)

Keywords:Ga2O3, RF FET, Delay time analysis

In the previous report, we fabricated a Ga₂O₃ MOSFET with a high aspect ratio of gate length (L_g)/channel layer thickness, and recorded the maximum oscillation frequency of 27 GHz at L_g = 200 nm, which is the highest value for a Ga₂O₃ FET. In this study, we performed a simple delay time analysis on the Ga₂O₃ MOSFET T with L_g = 50–1000 nm based on the L_g dependence of the current gain cutoff frequency to extract the effective electron velocity when electrons pass under the gate, and each delay time component in the total delay time.