The 81st JSAP Autumn Meeting, 2020

Presentation information

Oral presentation

15 Crystal Engineering » 15.7 Crystal characterization, impurities and crystal defects

[11p-Z12-1~17] 15.7 Crystal characterization, impurities and crystal defects

Fri. Sep 11, 2020 12:30 PM - 5:15 PM Z12

Kazuhisa Torigoe(SUMCO), Susumu Maeda(GWJ), Takuo Sasaki(QST), Haruo Sudo(GlobalWafers)

12:30 PM - 12:45 PM

[11p-Z12-1] Dependence of phosphorus evaporation flux for phosphorus concentration during silicon crystal growth

Satoshi Nakano1, Xin Liu1, Xuefeng Han1, Koichi Kakimoto1 (1.RIAM, Kyushu Univ.)

Keywords:dopant, directional solidification method, numerical simulation

Phosphorus is one of typical dopant for silicon crystal growth. As the segregation coefficient for phosphorus is small, phosphorus distribution in a silicon crystal is inhomogeneous. Inhomogeneous impurity distribution has an important consequence for resistivity distribution in a silicon crystal. In this study, we investigated the relation between evaporation for phosphorus from the melt surface and distribution of phosphorus concentration during unidirectional solidification method by numerical simulation.