Oral presentation

[11p-Z12-1~17] 15.7 Crystal characterization, impurities and crystal defects

Fri. Sep 11, 2020 12:30 PM - 5:15 PM Z12

Kazuhisa Torigoe(SUMCO), Susumu Maeda(GWJ), Takuo Sasaki(QST), Haruo Sudo(GlobalWafers)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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12:30 PM - 12:45 PM

[11p-Z12-1] Dependence of phosphorus evaporation flux for phosphorus concentration during silicon crystal growth

〇Satoshi Nakano¹, Xin Liu¹, Xuefeng Han¹, Koichi Kakimoto¹ (1.RIAM, Kyushu Univ.)

12:45 PM - 1:00 PM

[11p-Z12-2] Numerical analysis on resistivity distribution of 200 mm (8 inch) FZ silicon during crystal growth process

〇Kendai Miyata¹, Xue-Feng Han², Koichi Kakimoto^1,2 (1.Kyushu Univ., 2.RIAM, Kyushu Univ.)

1:00 PM - 1:15 PM

△ [11p-Z12-3] Detection Limit of Carbon in Si Photoluminescence after Electron Irradiation

〇Yuta Satake¹, Michio Tajima², Shota Asahara¹, Atsushi Ogura^1,2 (1.Meiji Univ., 2.Meiji Renewable Energy Laboratory)

1:15 PM - 1:30 PM

△ [11p-Z12-4] Anomalous Excitation-Power Dependences of G- and C-lines in Electron-Irradiated Si

〇Shota Asahara¹, Michio Tajima², Yuta Satake¹, Atsushi Ogura^1,2 (1.Meiji Univ., 2.Meiji Renewable Energy Laboratory)

1:30 PM - 1:45 PM

△ [11p-Z12-5] Evaluation of internal structure of GaN-HEMT

〇(M1)Keiichiro Kato¹, Keita Nakayama¹, Nobuo Satoh¹, Hidekazu Yamamoto¹ (1.Chiba Inst. of Tech.)

1:45 PM - 2:00 PM

▼ [11p-Z12-6] Structural Analysis of Na-flux GaN by Nanobeam X-ray Diffraction:
Local Lattice Constant Variation Depending on the Growth Mode

〇(M2)Zhendong WU¹, Kazuki Shida¹, Takeaki Hamachi¹, Yusuke Hayashi¹, Tetsuya Tohei¹, Masayuki Imanishi², Yusuke Mori², Kazushi Sumitani³, Yasuhiko Imai³, Shigeru Kimura³, Akira Sakai¹ (1.Grad. Sch. Eng. Sci., Osaka Univ., 2.Grad. Sch. Eng., Osaka Univ., 3.JASRI)

2:15 PM - 2:30 PM

△ [11p-Z12-7] Formation processes of grown-in defects during Si solid phase epitaxy

〇(M1)Masashi Chaen¹, Manabu Ishimaru¹ (1.Kyushu Inst.)

2:30 PM - 2:45 PM

△ [11p-Z12-8] Calculation of interstitial Si clusters in Si crystal using ANN potential

〇(M1)Masato Ohbitsu¹, Tatsuya Yokoi², Yusuke Noda³, Hiroki Nagakura¹, Sueoka Koji⁴ (1.Graduate School of Engineering, Okayama Pref. Univ., 2.Graduate School of Engineering, Nagoya Univ., 3.Kanazawa Gakuin Univ., 4.Okayama Pref. Univ.)

2:45 PM - 3:00 PM

△ [11p-Z12-9] Verification of stable vacancy clusters in Si crystal using ANN potential

〇(M1)Takuto Ushiro¹, Tatsuya Yokoi², Yusuke Noda³, Eiji Kamiyama⁴, Masato Ohbitsu¹, Hiroki Nagakura¹, Koji Sueoka⁴ (1.Graduate School of Engineering, Okayama Pref. Univ., 2.Graduate School of Engineering, Nagoya Univ., 3.Kanazawa Gakuin Univ., 4.Okayama Pref. Univ.)

3:00 PM - 3:15 PM

△ [11p-Z12-10] Effect of nitrogen doping on intrinsic point defect behavior in growing CZ-Si crystal

〇Motoharu Taniguchi¹, Koji Sueoka², Masataka Hourai³ (1.M.S.Okyayama Pref. Univ., 2.Okayama Pref. Univ., 3.SUMCO)

3:15 PM - 3:30 PM

△ [11p-Z12-11] First principles analysis of H-doping impact on intrinsic point defect behavior
in growing CZ-Si crystal (3)

〇(M2)Takuya Kusunoki¹, Koji Sueoka², Wataru Sugimura³, Masataka Hourai³ (1.Graduate School of Engineering, Okayama Pref. Univ., 2.Okayama Pref. Univ., 3.SUMCO)

3:45 PM - 4:00 PM

△ [11p-Z12-12] Influence of Plane Stress on the Stability of Metal Impurities in Si Crystal

〇Hiroya Iwashiro¹, Koji Sueoka², Kazuhisa Torigoe³, Toshiaki Ono³ (1.Graduate School of Engineering Okayama Pref. Univ., 2.Okayama Pref. Univ., 3.SUMCO CORPORATION)

4:00 PM - 4:15 PM

[11p-Z12-13] Analysis of metal gettering in pn junctions by Hakoniwa method

〇Eiji Kamiyama^1,2, Hiroki Nagakura², Koji Sueoka² (1.GlobalWafers Japan Co., Ltd., 2.Okayama Pref. Univ.)

4:15 PM - 4:30 PM

△ [11p-Z12-14] Formation of ultra-thin gettering layer by high pressure hydrogen plasma

〇Toshimitsu Nomura¹, Kenta Kimoto¹, Hiroaki Kakiuchi¹, Kiyoshi Yasutake¹, Hiromasa Ohmi¹ (1.Grad. Sch. of Osaka Univ.)

4:30 PM - 4:45 PM

[11p-Z12-15] Quality of silicon substrate and point defects (4) Precipitate nucleation and vacancy

〇Naohisa Inoue¹ (1.Osaka Prefecture Univ.)

4:45 PM - 5:00 PM

[11p-Z12-16] High sensitivity infrared absorption spectroscopy and infrared defect dynamics of silicon crystal (17) Various nitrogen states, STD and multiple absorption peaks

〇Naohisa Inoue¹, Shuichi Kawamata¹, Shuichi Okuda¹ (1.Osaka Prefecture Univ.)

5:00 PM - 5:15 PM

[11p-Z12-17] Measurement of carbon concentration in silicon crystal
(XXI) Concentration reduction and improvement of infrared absorption measurement for carbon engineering

〇Naohisa Inoue¹, Shuichi Okuda¹, Shuichi Kawamata¹ (1.Osaka Prefecture Univ.)

Sessions

15 Crystal Engineering » 15.7 Crystal characterization, impurities and crystal defects

[11p-Z12-1~17] 15.7 Crystal characterization, impurities and crystal defects

[11p-Z12-1] Dependence of phosphorus evaporation flux for phosphorus concentration during silicon crystal growth

[11p-Z12-2] Numerical analysis on resistivity distribution of 200 mm (8 inch) FZ silicon during crystal growth process

△ [11p-Z12-3] Detection Limit of Carbon in Si Photoluminescence after Electron Irradiation

△ [11p-Z12-4] Anomalous Excitation-Power Dependences of G- and C-lines in Electron-Irradiated Si

△ [11p-Z12-5] Evaluation of internal structure of GaN-HEMT

▼ [11p-Z12-6] Structural Analysis of Na-flux GaN by Nanobeam X-ray Diffraction:
Local Lattice Constant Variation Depending on the Growth Mode

△ [11p-Z12-7] Formation processes of grown-in defects during Si solid phase epitaxy

△ [11p-Z12-8] Calculation of interstitial Si clusters in Si crystal using ANN potential

△ [11p-Z12-9] Verification of stable vacancy clusters in Si crystal using ANN potential

△ [11p-Z12-10] Effect of nitrogen doping on intrinsic point defect behavior in growing CZ-Si crystal

△ [11p-Z12-11] First principles analysis of H-doping impact on intrinsic point defect behavior
in growing CZ-Si crystal (3)

△ [11p-Z12-12] Influence of Plane Stress on the Stability of Metal Impurities in Si Crystal

[11p-Z12-13] Analysis of metal gettering in pn junctions by Hakoniwa method

△ [11p-Z12-14] Formation of ultra-thin gettering layer by high pressure hydrogen plasma

[11p-Z12-15] Quality of silicon substrate and point defects (4) Precipitate nucleation and vacancy

[11p-Z12-16] High sensitivity infrared absorption spectroscopy and infrared defect dynamics of silicon crystal (17) Various nitrogen states, STD and multiple absorption peaks

[11p-Z12-17] Measurement of carbon concentration in silicon crystal
(XXI) Concentration reduction and improvement of infrared absorption measurement for carbon engineering

Authenticate

Sessions

15 Crystal Engineering » 15.7 Crystal characterization, impurities and crystal defects

[11p-Z12-1~17] 15.7 Crystal characterization, impurities and crystal defects

[11p-Z12-1] Dependence of phosphorus evaporation flux for phosphorus concentration during silicon crystal growth

[11p-Z12-2] Numerical analysis on resistivity distribution of 200 mm (8 inch) FZ silicon during crystal growth process

△ [11p-Z12-3] Detection Limit of Carbon in Si Photoluminescence after Electron Irradiation

△ [11p-Z12-4] Anomalous Excitation-Power Dependences of G- and C-lines in Electron-Irradiated Si

△ [11p-Z12-5] Evaluation of internal structure of GaN-HEMT

▼ [11p-Z12-6] Structural Analysis of Na-flux GaN by Nanobeam X-ray Diffraction:Local Lattice Constant Variation Depending on the Growth Mode

△ [11p-Z12-7] Formation processes of grown-in defects during Si solid phase epitaxy

△ [11p-Z12-8] Calculation of interstitial Si clusters in Si crystal using ANN potential

△ [11p-Z12-9] Verification of stable vacancy clusters in Si crystal using ANN potential

△ [11p-Z12-10] Effect of nitrogen doping on intrinsic point defect behavior in growing CZ-Si crystal

△ [11p-Z12-11] First principles analysis of H-doping impact on intrinsic point defect behaviorin growing CZ-Si crystal (3)

△ [11p-Z12-12] Influence of Plane Stress on the Stability of Metal Impurities in Si Crystal

[11p-Z12-13] Analysis of metal gettering in pn junctions by Hakoniwa method

△ [11p-Z12-14] Formation of ultra-thin gettering layer by high pressure hydrogen plasma

[11p-Z12-15] Quality of silicon substrate and point defects (4) Precipitate nucleation and vacancy

[11p-Z12-16] High sensitivity infrared absorption spectroscopy and infrared defect dynamics of silicon crystal (17) Various nitrogen states, STD and multiple absorption peaks

[11p-Z12-17] Measurement of carbon concentration in silicon crystal(XXI) Concentration reduction and improvement of infrared absorption measurement for carbon engineering

Authenticate

▼ [11p-Z12-6] Structural Analysis of Na-flux GaN by Nanobeam X-ray Diffraction:
Local Lattice Constant Variation Depending on the Growth Mode

△ [11p-Z12-11] First principles analysis of H-doping impact on intrinsic point defect behavior
in growing CZ-Si crystal (3)

[11p-Z12-17] Measurement of carbon concentration in silicon crystal
(XXI) Concentration reduction and improvement of infrared absorption measurement for carbon engineering