First principles analysis of H-doping impact on intrinsic point defect behavior<br />in growing CZ-Si crystal (3)

Takuya Kusunoki; Koji Sueoka; Wataru Sugimura; Masataka Hourai

Presentation information

Oral presentation

15 Crystal Engineering » 15.7 Crystal characterization, impurities and crystal defects

[11p-Z12-1~17] 15.7 Crystal characterization, impurities and crystal defects

Fri. Sep 11, 2020 12:30 PM - 5:15 PM Z12

Kazuhisa Torigoe(SUMCO), Susumu Maeda(GWJ), Takuo Sasaki(QST), Haruo Sudo(GlobalWafers)

3:15 PM - 3:30 PM

△ [11p-Z12-11] First principles analysis of H-doping impact on intrinsic point defect behavior
in growing CZ-Si crystal (3)

〇(M2)Takuya Kusunoki¹, Koji Sueoka², Wataru Sugimura³, Masataka Hourai³ (1.Graduate School of Engineering, Okayama Pref. Univ., 2.Okayama Pref. Univ., 3.SUMCO)

Keywords:point defect, hydrogen, first principles analysis

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Presentation information

[11p-Z12-1~17] 15.7 Crystal characterization, impurities and crystal defects

△ [11p-Z12-11] First principles analysis of H-doping impact on intrinsic point defect behaviorin growing CZ-Si crystal (3)

△ [11p-Z12-11] First principles analysis of H-doping impact on intrinsic point defect behavior
in growing CZ-Si crystal (3)