[11p-Z23-1~20] 16.3 シリコン系太陽電池

[11p-Z23-1] ハイパフォーマンス多結晶シリコンにおける粒界3重点と転位発生の相関

〇大野 裕¹、田島 和哉²、沓掛 健太朗³、宇佐美 徳隆² (1.東北大金研、2.名大工、3.理研)

キーワード：シリコン, 転位クラスター

A dislocation cluster degrading the PV properties is generated nearby a triple junction of GBs. Those dislocations are generated in a grain from the neighboring GB, accompanied with the movement of the junction. Occasionally, the atomic plane of the GB is sharply bent via the movement of the junction, supposedly due to micro-twins intersecting the GB nearby the junction, and a number of dislocation arrays are generated from the corners on the GB. The dislocation cluster is composed of bundles of low-angle GBs (LAGBs) and honeycombed dislocation networks on a {111} plane. Most of the dislocations have the same Burgers vector parallel to the {111} plane, suggesting that those dislocations are generated in the same slip system. Some dislocations in a honeycombed dislocation networks would change their expansion direction forming LAGBs when the dislocations are tangled. The generation processes of the dislocations will be discussed in terms of the impact of triple junctions of GBs.