[11p-Z23-1~20] 16.3 Bulk, thin-film and other silicon-based solar cells

▼ [11p-Z23-16] [Highlight]Passivation of Si-TiO₂ Interface Using Controlled SiO_x Layer by Zone Heating Recrystallization for Perovskite/Silicon Tandem Solar Cell

〇(D)Gekko Patria Budiutama¹, Kei Hasegawa¹, Manabu Ihara¹ (1.Tokyo Tech.)

Keywords:solar cell, perovskite/silicon tandem solar cell, passivation

A monolithic perovskite/c-Si tandem solar cell has attracted a lot of attention in the field of photovoltaic for its high theoretical energy conversion efficiency and cost-effectiveness. However, the approach of superposing the two light-absorbing materials directly raised new challenges that require mitigation in order for the device to reach high energy conversion efficiency. In this research, a new concept to passivate silicon surface that allows carrier movement between silicon bottom cell and perovskite top cell was introduced by controlling the properties of silicon oxide layer at silicon and titanium dioxide interface using Zone Heating Recrystallization method. With this approach the minority carrier lifetime at Si/TiO₂ interface increase dramatically from 5 µs to more than 250 µs.