[8a-Z02-1~10] 15.4 III-V-group nitride crystals

△ [8a-Z02-10] Microstructure analysis of thick AlN films grown with sputter-deposited annealed AlN templates on nano-patterned sapphire substrates

〇Nozomi Yamamoto¹, Takeaki Hamachi¹, Yusuke Hayashi¹, Tesuya Tohei¹, Hedeto Miyake^2,3, Akira Sakai¹ (1.Grad. Sch. Eng. Sci., Osaka Univ., 2.Grad. Sch. Eng.,Mie Univ., 3.Grad. Sch. RIS3, Mie Univ.)

Keywords:AlN, TEM, sputter

UV-C LEDs are expected to be sterilized by ultraviolet rays, but their high luminous threading dislocation density and low light extraction efficiency (LEE) pose a problem of low luminous efficiency. In the previous research, sputter growth (sp-AlN) and face-to-face annealing (FFA) were performed on nanopatterned sapphire substrate (N-PSS) for the purpose of AlN growth with high LEE and low dislocation density. The AlN template is produced in combination. In this study, we discuss the growth mechanism and dislocation reduction mechanism peculiar to the combination of FFA sp-AlN/N-PSS based on the results of transmission electron microscopy (TEM).