[8a-Z02-1~10] 15.4 III-V族窒化物結晶

▲ [8a-Z02-6] Time of flight mass spectroscopy analysis of transmetalation between trimethylindium and gallium in N₂ and H₂

〇(M2)Donglin Wu¹、Zheng Ye²、Shugo Nitta²、Yoshio Honda²、Markus Pristovsek²、Hiroshi Amano^2,3,4,5 (1.Dept. of Elec. Nagoya Univ.、2.Nagoya Univ. IMaSS、3.NIMS、4.Nagoya Univ. ARC、5.Nagoya Univ. VBL)

キーワード：AlInN growth, transmetalation, in-situ observation of MOVPE

The gallium (Ga) contamination during AlInN growth is a well-known problem. Unintentional Ga incorporation will cause lattice mismatched to GaN, lower two-dimensional electron density, and lower bandgap. The Ga supposedly originates from a transmetalation reaction between the methyl groups of trimethylindium (TMIn, (CH₃)₃In) to metallic Ga deposited on the showerhead. The transmetalation mobilizes the Ga by forming Ga(CH₃)x which can then reach the growth surface. We have shown direct proof about the transmetalation in study before. In this study, we found the same reaction and the same temperature dependence in H₂ ambient, but with a lower (CH₃)₂Ga (DMGa) signal.