[8a-Z06-1~5] The Third-generation dissimilar materials bonding and its application to the film growth control: Interface nano-kubernetes

[8a-Z06-2] Room temperature bonding using surface activated bonding method

〇Tadatomo Suga¹ (1.Meisei University)

Keywords:bonding, surface activation, interface

The recent development of surface activated bonding (SAB) and its bonding mechanism are presented. The standard SAB takes full advantage of the activated surfaces created by Ar ion beam bombardment for room temperature bonding of various metals and semiconductor materials. A method of extending SAB has been developed for bonding glass and ionic materials as well as polymers. An example of bonding GaN and a diamond substrate was demonstrated to confirm the feasibility of the extended SAB that adopts a thin Si nano adhesion layer to activate the interface between Ga and C for room temperature bonding. The bonding showed the highest value of thermal barrier conductance. Finally, the concept of cryogenic bonding is also introduced.