〇Mahito Yamamoto¹, Shingo Genchi², Teruo Kanki², Ryo Nouchi^3,4, Takashi Taniguchi⁵, Kenji Watanabe⁵, Hidekazu Tanaka² (1.Kansai Univ., 2.Osaka Univ., 3.Osaka Pref. Univ., 4.JST PRESTO, 5.NIMS)

Symposium (Oral)

[8p-Z06-1~9] The Third-generation dissimilar materials bonding and its application to the film growth control: Interface nano-kubernetes

Tue. Sep 8, 2020 12:30 PM - 4:50 PM Z06

Tetsuo Tsuchiya(AIST), Tetsuya Yamamoto(Kochi Univ. of Tech.), Takashi Kita(Kobe Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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12:30 PM - 1:00 PM

[8p-Z06-1] Widegap Semiconductor Heterojunction and Device Application

〇Yasuo Yasuo Yasuo¹, Masataka Imura¹, Jianwei Liu¹, Meiyong Liao¹ (1.NIMS)

1:00 PM - 1:30 PM

[8p-Z06-2] Semiconductor Wafer Bonding Technologies for High Efficiency Solar Cell Applications

〇Katsuaki Tanabe¹ (1.Kyoto Univ.)

1:30 PM - 2:00 PM

[8p-Z06-3] Fabrication of thin film solar cells through the epitaxial lift-off process

〇Naoya Miyashita¹, Yoshitaka Okada¹ (1.RCAST,Univ. of Tokyo)

2:15 PM - 2:30 PM

[8p-Z06-4] Flexible Anatase Nb: TiO₂ Epitaxial Thin Films Fabricated with Sacrificial Sr₃Al₂O₆Epitaxial Thin Films

〇Akihiro Hiraoka¹, Kohei Fujiwara², Hiroaki Nisikawa³ (1.Grad. Sch. B.O.S.T., Kindai Univ., 2.IMR, Tohoku Univ., 3.Fac. B.O.S.T., Kindai Univ.)

2:30 PM - 3:00 PM

[8p-Z06-5] Prospects for Material Delivery and Interface Formation by LIFT

〇Aiko Narazaki¹, Yoshiki Nakata², Tatsuya Shoji³, Yasuyuki Tsuboi⁴, Tadatake Sato¹, Hiroyuki Niino¹, Ayako Oyane¹, Hirofumi Miyaji⁵ (1.AIST, 2.Osaka Univ, 3.Kanagawa Univ, 4.Osaka City Univ, 5.Hokkaido Univ)

3:00 PM - 3:30 PM

[8p-Z06-6] Characteristics of Chemical Bonds in Ceramic Materials and Room Temperature Impact Consolidation

〇Yoshihiro Kuroiwa¹ (1.Hiroshima Univ.)

3:45 PM - 4:15 PM

[8p-Z06-7] In situ structural analysis of nitride growth surface using synchrotron X-ray scattering

〇Takuo Sasaki¹, Masamitu Takahasi¹ (1.QST)

4:15 PM - 4:45 PM

[8p-Z06-8] Defects observation in GaN pn junction diodes by optical and electrical property

〇Yoshio Honda^1,2, Atsushi Tanaka^1,3, Seiya Kawasaki⁴, Manato Deki^4,5, Amano Hiroshi^1,3,5,6 (1.IMass, Nagoya Univ., 2.IAR, Nagoya Univ., 3.NIMS, 4.Dept. of Elect., Nagoya Univ., 5.VBL, Nagoya Univ.VBL, Nagoya Univ., 6.ARC, Nagoya Univ.)

4:45 PM - 4:50 PM

[8p-Z06-9] Closing Remarks

〇Hiroaki Nishikawa¹ (1.Kindai Univ.)

Sessions

Symposium » The Third-generation dissimilar materials bonding and its application to the film growth control: Interface nano-kubernetes

[8a-Z06-1~5] The Third-generation dissimilar materials bonding and its application to the film growth control: Interface nano-kubernetes

[8a-Z06-1] Opening

[8a-Z06-2] Room temperature bonding using surface activated bonding method

[8a-Z06-3] Effects of Interfacial Oxides on Room Temperature Bonding for Dissimilar Materials

[8a-Z06-4] Room-temperature atomic layer technology based on two-dimensional oxides

[8a-Z06-5] Growth of VO₂ thin films on hBN and their device applications