Influence of pnonon-boundary scattering on phonon-drag effect in Si wires

Hiroya Ikeda; Khotimatul Fauziah; Takuto Nogita; Takanobu Watanabe; Yuhei Suzuki; Yoshinari Kamakura; Faiz Salleh

Presentation information

Oral presentation

22 Joint Session M "Phonon Engineering" » 22.1 Joint Session M "Phonon Engineering"

[8a-Z09-1~10] 22.1 Joint Session M "Phonon Engineering"

Tue. Sep 8, 2020 9:00 AM - 11:45 AM Z09

Yoshiaki Nakamura(Osaka Univ.), Junichiro Shiomi(Univ. of Tokyo)

10:30 AM - 10:45 AM

[8a-Z09-6] Influence of pnonon-boundary scattering on phonon-drag effect in Si wires

〇Hiroya Ikeda¹, Khotimatul Fauziah¹, Takuto Nogita¹, Takanobu Watanabe², Yuhei Suzuki³, Yoshinari Kamakura³, Faiz Salleh⁴ (1.Shizuoka Univ., 2.Waseda Univ., 3.Osaka Inst. Tech., 4.Univ. of Malaya)

Keywords:Seebeck coefficient, phonon drag effect, Si wire

We have analyzed the relationship between phonon-drag effect of Seebeck coefficient and wire sizes in Si wires from a viewpoint of specularity in phonon boundary scattering. As a result, even in Si nanowires, the phonon-drag effect can be preserved by making the wire surfaces ultmately flat.