The 81st JSAP Autumn Meeting, 2020

Presentation information

Oral presentation

2 Ionizing Radiation » 2.1 Radiation physics and Detector fundamentals

[8a-Z14-1~12] 2.1 Radiation physics and Detector fundamentals

Tue. Sep 8, 2020 8:30 AM - 11:30 AM Z14

Masanori Koshimizu(Tohoku Univ.)

10:45 AM - 11:00 AM

[8a-Z14-10] Comparison of Gate Bias Characteristics of MOSFETs at High TID

Ryoichiro Yoshida1, Arisa Kimura1, Motoki Ando1, Yuta Oshima1, Shinsuke Nabeya1, Kenji Hirakawa1, Masayuki Iwase1, Munehiro Ogasawara1, Takashi Yoda1, Noboru Ishihara1, Hiroyuki Ito1 (1.Tokyo Tech)

Keywords:Total Ionizing Dose effect, MOSFET, Gamma ray

The characteristic of MOSFETs degrade due to a total ionizing dose (TID) effect in environments where they are exposed to radiation for long periods of time, such as space and nuclear power. The TID effect refers to the degradation of MOSFETs due to the accumulation of electric charge when exposed to radiation for a long time. In this report, the effect of TID is experimentally verified by comparing constant voltage and triangular wave voltage input to the gate bias of the MOSFET. It was found that the on-state current fluctuates significantly as the fixed voltage is continuously applied to the gate due to the increase in the effect of TID.