[8a-Z14-1~12] 2.1 Radiation physics and Detector fundamentals

△ [8a-Z14-10] Comparison of Gate Bias Characteristics of MOSFETs at High TID

〇Ryoichiro Yoshida¹, Arisa Kimura¹, Motoki Ando¹, Yuta Oshima¹, Shinsuke Nabeya¹, Kenji Hirakawa¹, Masayuki Iwase¹, Munehiro Ogasawara¹, Takashi Yoda¹, Noboru Ishihara¹, Hiroyuki Ito¹ (1.Tokyo Tech)

Keywords:Total Ionizing Dose effect, MOSFET, Gamma ray

The characteristic of MOSFETs degrade due to a total ionizing dose (TID) effect in environments where they are exposed to radiation for long periods of time, such as space and nuclear power. The TID effect refers to the degradation of MOSFETs due to the accumulation of electric charge when exposed to radiation for a long time. In this report, the effect of TID is experimentally verified by comparing constant voltage and triangular wave voltage input to the gate bias of the MOSFET. It was found that the on-state current fluctuates significantly as the fixed voltage is continuously applied to the gate due to the increase in the effect of TID.