[8a-Z24-1~9] 11.5 Junction and circuit fabrication process, digital applications

[8a-Z24-2] Influence of PE-CVD Process on SIS Mixer Integrated Circuit

〇Shohei Ezaki¹, Wenlei Shan¹, Akihira Miyachi¹, Takafumi Kojima¹, Yoshinori Uzawa¹ (1.NAOJ)

Keywords:SIS mixer, Superconducting integrated circuit, PE-CVD

We have started to develop the fabrication of Superconductor-Insulator-Superconductor (SIS) mixer integrated circuits (ICs) for multibeam heterodyne receivers of radio-telescopes. Yield of the SIS mixer ICs has been increased by the introduction of PE-CVD process for insulator film deposition. On the other hand, the PE-CVD process caused the problem that one of the three junctions in an array was broken under certain condition. In this presentation, we will report the deposition conditions of the PE-CVD processes and the influence of the PE-CVD Processes on the SIS mixer ICs.