[8p-Z02-1~8] Materials Science and Advanced Electronics Created by Singularity of Nitride Semiconductors -Frontiers in defect physics: Concerted approach of characterization and theory-

△ [8p-Z02-5] Observation and Classification of Threading Dislocations in HVPE-grown GaN Crystal Using Multiphoton-Excitation Photoluminescence (2)

〇Mayuko Tsukakoshi¹, Tomoyuki Tanikawa¹, Masahiro Uemukai¹, Ryuji Katayama¹ (1.Graduate School of Engineering, Osaka Univ.)

Keywords:Nitride semiconductor