[8p-Z05-1~20] 6.2 カーボン系薄膜

▲ [8p-Z05-11] Study of ion-implanted-nitrogen related defects in diamond by transient photocapacitance spectroscopy

〇Junjie Guo^1,2、Toshiharu Makino^1,2、Satoshi Yamasaki^1,2、Masahiko Ogura²、Aboulaye Troare¹、Muhammad Hafiz Bin Abu Bakar^1,2、Takeaki Sakurai¹ (1.Tsukuba Univ.、2.AIST)

キーワード：diamond, defects, ion implantation

Defects induced by nitrogen ions implantation in diamond were investigated by transient photocapacitance (TPC) spectroscopy and photoluminescence (PL) spectroscopy. The obvious increase observed in the TPC spectrums from around 1.2 eV of photocapacitance is due to a hole emission process from hole trap states in the depletion layer of the Schottky diode. The thresholds of 1.3 eV appeared in both TPC spectrums of with and without implantation area, which is probably caused by the presence of excited impurity energy levels related to a common impurity like nitrogen, an intrinsic defect like a vacancy. On the other hand, the 2.2 eV defect only observed in the TPC spectrum of the implantation area probably is attributed to the nitrogen-vacancy center. The variation of PL spectra with different applied voltages suggests that the charge state of NV centers is controlled by bias voltages since their effect on the Fermi level.