Oral presentation

6 Thin Films and Surfaces » 6.2 Carbon-based thin films

[8p-Z05-1~20] 6.2 Carbon-based thin films

Tue. Sep 8, 2020 1:00 PM - 7:00 PM Z05

Masazumi Fujiwara(大阪市立大), Shinya Ohmagari(AIST), Satoshi Yamasaki(Kanazawa Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:00 PM - 1:15 PM

△ [8p-Z05-1] Achievement of High Current Density (~20 kA/cm²) and Low On-Resistance (2.5mΩ·cm²) in Vertical-Type 2DHG Diamond MOSFET by Trench Gate Structure

〇(B)Kosuke Ota¹, Jun Tsunoda¹, Masayuki Iwataki¹, Kiyotaka Horikawa¹, Syotaro Amano¹, Naoya Niikura¹, Atsushi Hiraiwa¹, Hiroshi Kawarada^1,2 (1.Waseda Univ., 2.Kagami Inst.)

1:15 PM - 1:30 PM

△ [8p-Z05-2] Carrier Transport Mechanism of Diamond p⁺-n Junction at Low Temperature by Using Diamond Schottky-pn Diodes

〇(M2)Ayumu Karasawa¹, Toshiharu Makino^1,2, Aboulaye Traore¹, Hiromitsu Kato², Masahiko Ogura², Yukako Kato², Daisuke Takeuchi², Satoshi Yamasaki^1,2,3, Takeaki Sakurai¹ (1.Univ. of Tsukuba, 2.AIST, 3.Kanazawa Univ.)

1:30 PM - 1:45 PM

[8p-Z05-3] Radiation detection by a thin film of polycrystalline diamond

〇Taku Miyake¹, Hisaya Nakagawa¹, Tomoaki Masuzawa¹, Takayuki Nakano¹, Toru Aoki¹, Hidenori Mimura¹ (1.Shizuoka Univ)

1:45 PM - 2:00 PM

[8p-Z05-4] Characteristics of P implanted diamond treated by high temperature and high pressure

〇Kento Higashiura¹, Rei Fukuta¹, Fumitaro Isikawa¹, Toru Shinmei², Hiroaki Ohfuji², Tetsuo Irifune², Hiromitsu Kato³, Masahiko Ogura³, Toshiharu Makino³, Tokuyuki Teraji⁴ (1.Ehime Univ., 2.Ehime Univ.GRC, 3.AIST, 4.NIMS)

2:00 PM - 2:15 PM

△ [8p-Z05-5] Observation of Heteroepitaxial Diamond Nucleation on Sapphire Substrate

〇(M1)Ryota Takaya¹, Yuki Kawamata², Koji Koyama², Seong-woo Kim², Makoto Kasu¹ (1.Saga Univ, 2.Adamant Namiki Precision)

2:15 PM - 2:30 PM

[8p-Z05-6] Surface observation and orientation evaluation of heteroepitaxial diamond grown on Ir(001)/MgO(001) at initial stages

〇Yutaka Kimura¹, Takaya Ouchi², Hideo Aida², Ryuji Oshima^2,3, Atushito Sawabe¹ (1.Aoyama Gakuin Univ., 2.Nagaoka Univ. of Tech., 3.Disco)

2:30 PM - 2:45 PM

△ [8p-Z05-7] Synthesis of Coalescent Diamond Thin Films on Si by α-Parameter Modulation

〇(M2)Hiroya Ueoka¹, Hagiwara Daichi¹, Isshiki Hideo¹ (1.UEC)

2:45 PM - 3:00 PM

▲ [8p-Z05-8] First-Principles Study on Oxidative Etching of Diamond (100) Surface

〇(M2)John Isaac Guinto Enriquez¹, Fahdzi Muttaqien², Masato Michiuchi³, Kouji Inagaki¹, Masaaki Geshi¹, Ikutaro Hamada¹, Yoshitada Morikawa¹ (1.Osaka Univ., 2.Inst. Tech. Bandung, 3.Sumitomo Elec. Ind.)

3:30 PM - 3:45 PM

△ [8p-Z05-9] Photoelectrical Readout of NV Center Utilizing Lateral p-i-n Diode

〇Takuya Murooka¹, Masafumi Shiigai¹, Hoang Minh Tuan¹, Kosuke Mizuno¹, Hiromitsu Kato², Toshiharu Makino², Masahiko Ogura², Satoshi Yamasaki², Mutsuko Hatano¹, Takayuki Iwasaki¹ (1.Tokyo Tech., 2.AIST)

3:45 PM - 4:00 PM

[8p-Z05-10] AC Magnetic-Field Sensing using NV Centers by Electrically Detected Magnetic Resonance Method and Bias-Voltage Dependence of the Sensitivity around Zero Bias Voltage

〇Hiroki Morishita¹, Tetsuri Nishikawa¹, Shinobu Onoda², Hiroshi Abe², Takeshi Ohshima², Norikazu Mizuochi¹ (1.Kyoto Univ., 2.QST)

4:00 PM - 4:15 PM

▲ [8p-Z05-11] Study of ion-implanted-nitrogen related defects in diamond by transient photocapacitance spectroscopy

〇Junjie Guo^1,2, Toshiharu Makino^1,2, Satoshi Yamasaki^1,2, Masahiko Ogura², Aboulaye Troare¹, Muhammad Hafiz Bin Abu Bakar^1,2, Takeaki Sakurai¹ (1.Tsukuba Univ., 2.AIST)

4:15 PM - 4:30 PM

△ [8p-Z05-12] Improvement of nitrogen-enriched implantation for creation of multi-qubits composed of NV centers

〇(M1)Kosuke Kimura^1,2, Shinobu Onoda², Keisuke Yamada², Wataru Kada¹, Hiroshi Kawarada³, Hideyuki Watanabe⁴, Junichi Isoya⁵, Osamu Hanaizumi¹, Takeshi Ohshima² (1.Gunma Univ., 2.QST, 3.Waseda Univ., 4.AIST, 5.Univ. of Tsukuba)

4:30 PM - 4:45 PM

△ [8p-Z05-13] Improvement of charge stability and spin-chorenece properties of near-surface NV centers in diamond

〇Tetsuri Nishikawa¹, Akira Watanabe¹, Hiromitsu Kato², Masanori Fujiwara¹, Toshiharu Makino², Satoru Yamasaki², David Ernst Herbschleb¹, Norikazu Mizuochi¹ (1.Kyoto Univ., 2.AIST)

4:45 PM - 5:00 PM

△ [8p-Z05-14] Fabrication of Preferentially-oriented Nitrogen-Vacancy Centers in Diamond by CVD Growth on (001) Substrate with (111) V-Groove Structure

〇(M2)Ryouhei Chiji¹, Masatsugu Nagai², Tomoki Yoshimoto², Yuta Nakano², Norio Tokuda², Junko Ishi-Hayase¹ (1.Keio Univ., 2.Kanazawa Univ.)

5:30 PM - 5:45 PM

[8p-Z05-15] In-vivo Real-time nanodiamond quantum thermometry

〇Masazumi Fujiwara¹, S Sun¹, A Dohms², Y Nishimura¹, K Suto¹, Y Takezawa¹, K Oshimi¹, L Zhao³, N Sadzak², Y Umehara¹, Y Teki¹, N Komatsu⁴, O Benson², Y Shikano⁵, E Nakadai¹ (1.Osaka City Univ., 2.HU Berlin, 3.Soochow Univ., 4.Kyoto Univ., 5.Keio U, Chapman U)

5:45 PM - 6:00 PM

△ [8p-Z05-16] Magnetic field vector imaging of giant magnetostrictive material using NV centers in diamond towards hybrid quantum sensor

〇Ryota Kitagawa¹, Soki Urashita¹, Keigo Arai¹, Kosuke Mizuno¹, Hitoshi Ishiwata^1,2, Yota Takamura¹, Takayuki Iwasaki¹, Shigeki Nakagawa¹, Mutusko Hatano¹ (1.Tokyo Tech., 2.PRESTO)

6:00 PM - 6:15 PM

[8p-Z05-17] Diamond quantum sensor using four operation points on the ODMR

〇(M2)Haruki Iwatsuka¹, Yuji Hatano¹, Keigo Arai¹, Takayuki Iwasaki¹, Mutsuko Hatano¹ (1.Tokyou Inst. Tech.)

6:15 PM - 6:30 PM

[8p-Z05-18] Sensitivity of the diamond quantum sensor in the simultaneous multiple operation point measurement

〇Yuji Hatano¹, Daisuke Nishitani¹, Yuta Masuyama², Shinobu Onoda², Takeshi Ohshima², Keigo Arai¹, Takayuki Iwasaki¹, Mutsuko Hatano^1,2 (1.Tokyo Inst. Tech., 2.QST)

6:30 PM - 6:45 PM

△ [8p-Z05-19] Improvement of Temperature Sensitivity based on Manipulation of Electron Spin of NV Centers in Diamond using Multi-frequency Microwaves

〇(M1)Katsuya Nakahashi¹, Yuichiro Matsuzaki², Kan Hayashi³, Norikazu Mizuochi³, Junko Ishi-Hayase¹ (1.Keio Univ., 2.AIST, 3.Kyoto Univ.)

6:45 PM - 7:00 PM

△ [8p-Z05-20] Rabi oscillation and spin echo between ground state manifolds of nitrogen vacancy centers in diamond by external magnetic driving fields

〇(M2)Tatsuma Yamaguchi¹, Yuichiro Matsuzaki², Hideyuki Watanabe², Norikazu Mizuochi³, Junko Ishi-Hayase¹ (1.Keio Univ., 2.AIST, 3.Kyoto Univ.)

Session information

[8p-Z05-1~20] 6.2 Carbon-based thin films

△ [8p-Z05-1] Achievement of High Current Density (~20 kA/cm²) and Low On-Resistance (2.5mΩ·cm²) in Vertical-Type 2DHG Diamond MOSFET by Trench Gate Structure

△ [8p-Z05-2] Carrier Transport Mechanism of Diamond p⁺-n Junction at Low Temperature by Using Diamond Schottky-pn Diodes

[8p-Z05-3] Radiation detection by a thin film of polycrystalline diamond

[8p-Z05-4] Characteristics of P implanted diamond treated by high temperature and high pressure

△ [8p-Z05-5] Observation of Heteroepitaxial Diamond Nucleation on Sapphire Substrate

[8p-Z05-6] Surface observation and orientation evaluation of heteroepitaxial diamond grown on Ir(001)/MgO(001) at initial stages

△ [8p-Z05-7] Synthesis of Coalescent Diamond Thin Films on Si by α-Parameter Modulation

▲ [8p-Z05-8] First-Principles Study on Oxidative Etching of Diamond (100) Surface

△ [8p-Z05-9] Photoelectrical Readout of NV Center Utilizing Lateral p-i-n Diode

[8p-Z05-10] AC Magnetic-Field Sensing using NV Centers by Electrically Detected Magnetic Resonance Method and Bias-Voltage Dependence of the Sensitivity around Zero Bias Voltage

▲ [8p-Z05-11] Study of ion-implanted-nitrogen related defects in diamond by transient photocapacitance spectroscopy

△ [8p-Z05-12] Improvement of nitrogen-enriched implantation for creation of multi-qubits composed of NV centers

△ [8p-Z05-13] Improvement of charge stability and spin-chorenece properties of near-surface NV centers in diamond

△ [8p-Z05-14] Fabrication of Preferentially-oriented Nitrogen-Vacancy Centers in Diamond by CVD Growth on (001) Substrate with (111) V-Groove Structure

[8p-Z05-15] In-vivo Real-time nanodiamond quantum thermometry

△ [8p-Z05-16] Magnetic field vector imaging of giant magnetostrictive material using NV centers in diamond towards hybrid quantum sensor

[8p-Z05-17] Diamond quantum sensor using four operation points on the ODMR

[8p-Z05-18] Sensitivity of the diamond quantum sensor in the simultaneous multiple operation point measurement

△ [8p-Z05-19] Improvement of Temperature Sensitivity based on Manipulation of Electron Spin of NV Centers in Diamond using Multi-frequency Microwaves

△ [8p-Z05-20] Rabi oscillation and spin echo between ground state manifolds of nitrogen vacancy centers in diamond by external magnetic driving fields

Authenticate

Session information

[8p-Z05-1~20] 6.2 Carbon-based thin films

△ [8p-Z05-1] Achievement of High Current Density (~20 kA/cm2) and Low On-Resistance (2.5mΩ·cm2) in Vertical-Type 2DHG Diamond MOSFET by Trench Gate Structure

△ [8p-Z05-2] Carrier Transport Mechanism of Diamond p+-n Junction at Low Temperature by Using Diamond Schottky-pn Diodes

[8p-Z05-3] Radiation detection by a thin film of polycrystalline diamond

[8p-Z05-4] Characteristics of P implanted diamond treated by high temperature and high pressure

△ [8p-Z05-5] Observation of Heteroepitaxial Diamond Nucleation on Sapphire Substrate

[8p-Z05-6] Surface observation and orientation evaluation of heteroepitaxial diamond grown on Ir(001)/MgO(001) at initial stages

△ [8p-Z05-7] Synthesis of Coalescent Diamond Thin Films on Si by α-Parameter Modulation

▲ [8p-Z05-8] First-Principles Study on Oxidative Etching of Diamond (100) Surface

△ [8p-Z05-9] Photoelectrical Readout of NV Center Utilizing Lateral p-i-n Diode

[8p-Z05-10] AC Magnetic-Field Sensing using NV Centers by Electrically Detected Magnetic Resonance Method and Bias-Voltage Dependence of the Sensitivity around Zero Bias Voltage

▲ [8p-Z05-11] Study of ion-implanted-nitrogen related defects in diamond by transient photocapacitance spectroscopy

△ [8p-Z05-12] Improvement of nitrogen-enriched implantation for creation of multi-qubits composed of NV centers

△ [8p-Z05-13] Improvement of charge stability and spin-chorenece properties of near-surface NV centers in diamond

△ [8p-Z05-14] Fabrication of Preferentially-oriented Nitrogen-Vacancy Centers in Diamond by CVD Growth on (001) Substrate with (111) V-Groove Structure

[8p-Z05-15] In-vivo Real-time nanodiamond quantum thermometry

△ [8p-Z05-16] Magnetic field vector imaging of giant magnetostrictive material using NV centers in diamond towards hybrid quantum sensor

[8p-Z05-17] Diamond quantum sensor using four operation points on the ODMR

[8p-Z05-18] Sensitivity of the diamond quantum sensor in the simultaneous multiple operation point measurement

△ [8p-Z05-19] Improvement of Temperature Sensitivity based on Manipulation of Electron Spin of NV Centers in Diamond using Multi-frequency Microwaves

△ [8p-Z05-20] Rabi oscillation and spin echo between ground state manifolds of nitrogen vacancy centers in diamond by external magnetic driving fields

Authenticate

△ [8p-Z05-1] Achievement of High Current Density (~20 kA/cm²) and Low On-Resistance (2.5mΩ·cm²) in Vertical-Type 2DHG Diamond MOSFET by Trench Gate Structure

△ [8p-Z05-2] Carrier Transport Mechanism of Diamond p⁺-n Junction at Low Temperature by Using Diamond Schottky-pn Diodes