[8p-Z05-1~20] 6.2 Carbon-based thin films

△ [8p-Z05-12] Improvement of nitrogen-enriched implantation for creation of multi-qubits composed of NV centers

〇(M1)Kosuke Kimura^1,2, Shinobu Onoda², Keisuke Yamada², Wataru Kada¹, Hiroshi Kawarada³, Hideyuki Watanabe⁴, Junichi Isoya⁵, Osamu Hanaizumi¹, Takeshi Ohshima² (1.Gunma Univ., 2.QST, 3.Waseda Univ., 4.AIST, 5.Univ. of Tsukuba)

Keywords:NV center, ion implantation, Phthalocyanine

A nitrogen vacancy (NV) center in diamond is known as qubit with excellent magneto-optical properties at room temperature. An ion implantation into diamond is known as one of the most popular methods for creating multiple qubits. We have reported that the creation of three qubits was realized by implantation of an organic compound (C₅N₄H_n) ion containing four nitrogen atoms. In this study, we developed the C₃₂N₈H₁₈ ion beam containing more nitrogen atoms than C₅N₄H_n, and tried to create further multiple qubits composed of NV centers.