[8p-Z17-1~12] 6.1 Ferroelectric thin films

[8p-Z17-8] Channel current value change due to pressure of contact sensor using P(VDF-TrFE) film and ZnO semiconductor

〇Shusaku Matsumoto¹, Ryo Honda¹, Akio Furukawa¹ (1.Tokyo UniV. of Science)

Keywords:Ferroelectrics, semiconductor, Contact sensor

Human coexistence type robots for the purpose of nursing care require sophisticated robot handling technology like humans, and contact sensing technology plays a large role. The purpose of this study is to fabricate a device with a contact sensor function using ZnO, which is an N-type semiconductor, using a piezoelectric polymer material for the gate insulating film, and to improve its performance. In this report, we report the behavior of the channel current when pressure is applied to this ZnO-FET.