[8p-Z17-1~12] 6.1 Ferroelectric thin films

[8p-Z17-9] MOCVD Growth of BiFeO₃ Thin Films on Pit-patterned SrTiO₃ substrate

〇Seiji Nakashima¹, Satoshi Kimura¹, Yuki Iwata¹, Hironori Fujsawa¹ (1.Univ. of Hyogo)

Keywords:ferroelectrics, thin films, charged domain walls

Charged domain walls (CDWs) in ferroelectrics show anomalous conductivity compared with bulk regions. In addition, the conductivity can be controlled by ferroelectric domain switching, realizing ferroelectric resistive switching memory. In thin study, we have demonstrated artificial introduction of the CDWs into BiFeO₃ thin films using pit pattern fabricated on SrTiO₃ surface. The BiFeO₃ thin films have been grown by MOCVD, and influence of the growth process on the domain structure has been investigated.