The 81st JSAP Autumn Meeting, 2020

Presentation information

Oral presentation

9 Applied Materials Science » 9.4 Thermoelectric conversion

[8p-Z18-1~16] 9.4 Thermoelectric conversion

Tue. Sep 8, 2020 12:30 PM - 5:15 PM Z18

Mikio Koyano(JAIST), Takahiro Tomita(東大), Takafumi Ishibe(Osaka Univ.)

1:45 PM - 2:15 PM

[8p-Z18-5] [The 4th Thin Film and Surface Physics Division Award Speech] Thermoelectric power factor enhancement in interface-controlled transparent ZnO film

Takafumi Ishibe1, Atsuki Tomeda1, Kentaro Watanabe2, Yoshinari Kamakura3, Nobuya Mori4, Nobuyasu Naruse5, Yutaka Mera5, Yuichiro Yamashita6, Yoshiaki Nakamura1 (1.Eng. Sci. Osaka Univ., 2.Shinshu Univ., 3.Osaka Institute of Technology, 4.Eng. Osaka Univ., 5.Shiga Univ. Medical Science, 6.AIST)

Keywords:Thermoelectric conversion, Oxide semiconductor, Nanostructure

Thermoelectric performance enhancement relies on the simultaneous realization of high thermoelectric power factor and low thermal conductivity. In recent years, nanostructuring approach has brought drastic thermal conductivity reduction. However, then, thermoelectric power factor is degraded. Therfore, themoelectric dimensionless figure-of-merit value remains low. In this study, we simultaneously increase thermoelectric power factor in addition to thermal conductivity reduction by introducing ZnO nanowire with dopant-controlled interface in ZnO film, which is well known as low-cont non-toxic material. Therein, phonon is scattered at the interface and only energetic electron is transmitted through the interface.