[8p-Z18-1~16] 9.4 Thermoelectric conversion

[8p-Z18-5] [The 4th Thin Film and Surface Physics Division Award Speech] Thermoelectric power factor enhancement in interface-controlled transparent ZnO film

〇Takafumi Ishibe¹, Atsuki Tomeda¹, Kentaro Watanabe², Yoshinari Kamakura³, Nobuya Mori⁴, Nobuyasu Naruse⁵, Yutaka Mera⁵, Yuichiro Yamashita⁶, Yoshiaki Nakamura¹ (1.Eng. Sci. Osaka Univ., 2.Shinshu Univ., 3.Osaka Institute of Technology, 4.Eng. Osaka Univ., 5.Shiga Univ. Medical Science, 6.AIST)

Keywords:Thermoelectric conversion, Oxide semiconductor, Nanostructure

Thermoelectric performance enhancement relies on the simultaneous realization of high thermoelectric power factor and low thermal conductivity. In recent years, nanostructuring approach has brought drastic thermal conductivity reduction. However, then, thermoelectric power factor is degraded. Therfore, themoelectric dimensionless figure-of-merit value remains low. In this study, we simultaneously increase thermoelectric power factor in addition to thermal conductivity reduction by introducing ZnO nanowire with dopant-controlled interface in ZnO film, which is well known as low-cont non-toxic material. Therein, phonon is scattered at the interface and only energetic electron is transmitted through the interface.