3:00 PM - 3:15 PM
[8p-Z26-8] Resistive switching chracteristics in a p-MnTe/n-AZO stacked layer
Keywords:Manganese Telluride, pn junction, Phase change random access memory
Presentation information
Oral presentation
16 Amorphous and Microcrystalline Materials » 16.1 Fundamental properties, evaluation, process and devices in disordered materials
[8p-Z26-1~23] 16.1 Fundamental properties, evaluation, process and devices in disordered materials
Tue. Sep 8, 2020 1:00 PM - 7:30 PM Z26
Tsuyoshi Honma(Nagaoka Univ. of Tech.), Akira Saitoh(Ehime Univ.), Tamihiro Gotoh(Gunma Univ.), Norimitsu Yoshida(Gifu Univ.)