The 81st JSAP Autumn Meeting, 2020

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16 Amorphous and Microcrystalline Materials » 16.1 Fundamental properties, evaluation, process and devices in disordered materials

[8p-Z26-1~23] 16.1 Fundamental properties, evaluation, process and devices in disordered materials

Tue. Sep 8, 2020 1:00 PM - 7:30 PM Z26

Tsuyoshi Honma(Nagaoka Univ. of Tech.), Akira Saitoh(Ehime Univ.), Tamihiro Gotoh(Gunma Univ.), Norimitsu Yoshida(Gifu Univ.)

2:45 PM - 3:00 PM

[8p-Z26-7] Operation mechanism in MnTe-based phase change memory accompanied by polymorphic transformation

〇Shunsuke Mori1, Daisuke Ando1, Yuji Sutou1 (1.Tohoku Univ.)

Keywords:phase change memory, Manganese Telluride, polymorphic transformation

MnTe-based memory device has been found to perform the very fast and low energy memory operation. It is indicated that those operation characteristics are attributed to the melting-free polymorphic transformation in the MnTe films. Meanwhile, the cyclic durability of memory operation is still limited for several hundred times, which is required to be improved for memory applications. In this study, we tried to elucidate the operation and failure mechanism toward the practical applications of MnTe-based phase change memory.