[9a-Z07-1~9] 6.3 Oxide electronics

[9a-Z07-3] Nonlinear charge-spin conversion in SrIrO₃ thin films

〇Yusuke Kozuka¹, Shinji Isogami¹, Das Saikat¹, Jun Fujioka², Shinya Kasai^1,3 (1.NIMS, 2.Univ. Tsukuba, 3.JST-PRESTO)

Keywords:Spin Hall effect, Oxide thin film, Toplogical material

Interconversion between charge and spin currents is based on spin Hall effect and has recently been found to show nonlinear higher-order response in terms of current in noncentrosymmetric materials. In this study, we have observed nonlinear charge-spin conversion in centrosymmetric perovskite oxide thin films SrIrO₃. The second-order nonlinear susceptibility of SrIrO₃ thin films is found to be much larger than a topological insulator Be2Te₃ by harmonic measurements.