[9a-Z10-1~11] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

[9a-Z10-10] Oxygen concentration in SiC_xN_yO_z thin film produced by room temperature PECVD

〇Kenta Hori¹, Toru Watanabe¹, Hitoshi Habuka¹ (1.Yokohama Nat. Univ.)

Keywords:plasma enhanced chemical vapor deposition, silicic thin film, oxygen contamination

SiCNO film is expected to be used as protective material having many functions. In the previous report, thickness of amorphous SiCNO film produced by supplying monomethylsilane gas and nitrogen gas into argon plasma are expressed in partial pressures of three gases and the value of electric current flowing inside the apparatus. In this research, in order to decrease oxygen concentration in SiCNO film, we tried to express oxygen concentration in partial pressures and the value of electric current and estimate it.