[9a-Z10-1~11] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

[9a-Z10-11] Heavy boron doping using boron trichloride gas for silicon epitaxial growth

Mitsuko Muroi¹, Mana Otani¹, 〇Hitoshi Habuka¹ (1.Yokohama Nat. Univ.)

Keywords:Silicon epitaxial growth, Boron trichloride, Boron doping

BCl3 gas is evaluated for heavily boron doping in the silicon epitaxial film. In this study, the relationship between the boron concentration in the silicon film and the BCl3gas flow rate was studied.