[9a-Z11-1~13] 12.4 Organic light-emitting devices and organic transistors

[9a-Z11-7] Development of anti-ambipolar transistors Part I: Carrier transport and application to multi-valued logic circuits

〇Ryoma Hayakawa¹, Kazuyoshi Kobashi^1,2, Chang-Hyun Kim³, Yutaka Wakayama^1,2 (1.NIMS, 2.Kyushu Univ., 3.Gachon Univ.)

Keywords:Anti-ambipolar transistor, Multi-valued logic circuit, Carrier transport

Negative differential resistance devices have shown great promise in term of developing multi-valued logic circuits. However, the transistors suffer from relatively small peak-valley ratios (PVRs) at room temperature. In this regard, we have proposed an organic anti-ambipolar transistor (AAT), which possesses a partially overlapped pn junction in the middle of the transistor channel. The AAT achieved an extremely large PVR up to 10⁴ even at room temperature. In this presentation, we will reveal the carrier transport mechanism in the transistor and then will present a recent progress on a multi-valued logic circuit which consists of a series circuit of an AAT and a n-type transistor.