[9a-Z11-1~13] 12.4 Organic light-emitting devices and organic transistors

△ [9a-Z11-8] Development of anti-ambipolar transistors Part Ⅱ: Materials exploration for improving transistor performance

〇Kota Fuchii^1,2, Ryoma Hayakawa¹, Kazuyoshi Kobashi^1,3, Yoichi Yamada², Yutaka Wakayama^1,3 (1.NIMS, 2.Tsukuba Univ., 3.Kyushu Univ.)

Keywords:Anti-ambipolar transistor, Improved transistor performance, Surface and interface engineering

Flexible and high-performance organic transistors hold promise for Internet of Things (IoT) society. In this regard, we developed a new transistor, namely an anti-ambipolar transistor (AAT). Of importance is that the transistor achieved a negative resistance even at room temperature, where the drain current rapidly increases and decreases with increasing gate voltage. Furthermore, we have demonstrated a multi-valued logic operation by combination of an AAT and a conventional n-type transistor. These achievements have a potential to improve the data processability of current integrated circuits. In this study, we present the improvement of the AAT by the following approaches which are adoption of 1) interface layers, 2) high-k gate insulators, and 3) high-mobility semiconductor materials. In addition, we also introduce the multilevel logic circuits with the improved AATs.