The 81st JSAP Autumn Meeting, 2020

Presentation information

Oral presentation

13 Semiconductors » 13.9 Compound solar cells

[9a-Z15-1~11] 13.9 Compound solar cells

Wed. Sep 9, 2020 9:00 AM - 12:00 PM Z15

Kunihko Tanaka(Nagaoka Univ. of Tech.)

9:30 AM - 9:45 AM

[9a-Z15-3] Fabrication of n-type SnS thin films by sputtering deposition

ISSEI SUZUKI1, Sakiko Kawanishi1, Sage Bauers2, Andriy Zakutayev2, Hiroyuki Shibata1, Minesok Kim3, Hiroshi Yanagi3, Takahisa Omata1 (1.Tohoku Univ., 2.NREL, 3.Univ. of Yamanashi)

Keywords:SnS, Sputtering, Photovoltaics

It is difficult to convert SnS to n-type because acceptor-type defects are easily generated in SnS. In 2016, halogen-doped n-type SnS sintered bodies and single crystals were reported, but thin-film n-type SnS had not been reported so far, and it remained as a barrier to realize a homojunction device. In this study, Cl-doped SnS thin films with high n-type conductivity were realized by sputtering deposition with suppressing the generation of acceptor-type defects.