12:30 PM - 12:45 PM
[9p-Z01-1] Be-N in heavily Be-doped GaAsN
Keywords:GaAsN, Heavily Be doping, Lattice parameter
Oral presentation
15 Crystal Engineering » 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy
Wed. Sep 9, 2020 12:30 PM - 6:00 PM Z01
Fumitaro Ishikawa(Ehime Univ.), Keisuke YAMANE(Toyohashi Univ. of Tech.)
12:30 PM - 12:45 PM
Keywords:GaAsN, Heavily Be doping, Lattice parameter