Controlling size and emission wavelength of buried InAs QDs using the growth rate of the GaAs capping layer

Presentation information

Oral presentation

15 Crystal Engineering » 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Wed. Sep 9, 2020 12:30 PM - 6:00 PM Z01

Fumitaro Ishikawa(Ehime Univ.), Keisuke YAMANE(Toyohashi Univ. of Tech.)

4:30 PM - 4:45 PM

〇Tao Wang¹, Jin Oshima¹, Nobuhiko Ozaki¹, Naoki Ikeda², Yoshimasa Sugimoto² (1.Wakayama Univ., 2.NIMS)

Keywords:Quantum dots