[9p-Z04-1~20] 13.8 Optical properties and light-emitting devices

△ [9p-Z04-13] Mg flow rate dependence of Tm near-infrared emission intensity

〇(M1)Ryota Komai¹, Naoki Yoshioka¹, Shuhei Ichikawa¹, Jun Tatebayashi¹, Yasufumi Fujiwara¹ (1.Osaka Univ.)

Keywords:rare earth, near-infrared light emitting diode, organometallic vapor phase epitaxy

We have been working on the realization of an ultra-narrow-band, ultra-wavelength-stable near-infrared light emitting diode with an active layer in which Tm, which is a rare earth element, is doped in-situ to GaN by organometallic vapor phase epitaxy. We previously reported that New Tm emission centers were observed by intentionally co-doping Mg impurities in addition to Tm during crystal growth. In this study, we report that the improvement of surface morphologies and the enhancement of Tm near-infrared emission were realized by controlling the Mg flow rate.