The 81st JSAP Autumn Meeting, 2020

Presentation information

Oral presentation

13 Semiconductors » 13.8 Optical properties and light-emitting devices

[9p-Z04-1~20] 13.8 Optical properties and light-emitting devices

Wed. Sep 9, 2020 1:00 PM - 6:15 PM Z04

Yasushi Nanai(Aoyama Gakuin Univ.), Takayuki Nakanishi(NIMS)

1:45 PM - 2:00 PM

[9p-Z04-4] Synthesis and optical properties of Zn(Te1-xSx) quantum dots

Satoshi Tsukuda1, Haruko Inayoshi1, Masao Kita2, Takahisa Omata1 (1.IMRAM, Tohoku Univ., 2.NIT, Toyama College)

Keywords:Quantum dot, Phosphor, Alloy

CdSe-based QDs had been applied as green and red phosphors for backlight downconversion in liquid crystal displays because of their excellent light emission properties. However, alternatives to CdSe-based QDs are strongly desired because the use of Cd-containing materials highly is restricted by governmental regulations in many countries owing to Cd toxicity. In this study, we synthesized Zn(Te1-xSx) QDs with various composition x and particle sizes. The properties of Zn(Te1-xSx) QDs were evaluated in terms of the optical gap and emission energy depending on both particle size and their composition, x.