5:30 PM - 5:45 PM
[9p-Z12-18] Channel direction dependence of hole mobility in strained Si/relaxed SiGe/Si(110) heterostructure p-MOSFET
Keywords:strained Si, hole mobility
Oral presentation
15 Crystal Engineering » 15.5 Group IV crystals and alloys
Wed. Sep 9, 2020 1:00 PM - 6:00 PM Z12
Kentarou Sawano(Tokyo City Univ.), Kaoru Toko(Univ. of Tsukuba)
5:30 PM - 5:45 PM
Keywords:strained Si, hole mobility