The 81st JSAP Autumn Meeting, 2020

Presentation information

Oral presentation

13 Semiconductors » 13.9 Compound solar cells

[9p-Z15-1~10] 13.9 Compound solar cells

Wed. Sep 9, 2020 1:00 PM - 3:45 PM Z15

Hitoshi Tampo(AIST)

3:15 PM - 3:30 PM

[9p-Z15-9] The effect of Interface Band Offset of CuGaS2 Thin Film Solar Cells

〇(M2)Myeongok Kim1,2, Nazmul Ahsan2,3, Zacharie Li Kao Jehl4, Yoshitaka Okada1,2,3 (1.Grad. Arts and Sci. UTokyo, 2.RCAST UTokyo, 3.Elec. Eng. UTokyo, 4.IREC)

Keywords:CuGaS2 solar cell, buffer layer, band offset

To realize CuGaS2 solar cell, there should be sufficient understanding on its appropriate solar cell structure. This research, therefore, investigates the buffer layer condition suitable for CuGaS2 solar cell by SCAPS-1D based simulation. ZnS buffer is selected as the buffer layer of CuGaS2 solar cell for it has wider bandgap than CuGaS2, being transparent for light to be absorbed by CuGaS2. When there is a positive conduction band offset about 0.4eV at CuGaS2-ZnS interface, there are improvement in VOC and reduction in FF. It is confirmed that the reduction in FF does not attribute to band offset at buffer-window layer interface. In recovering FF, improving the conductivity of buffer layer is found to be effective.